Molybdenum carbonitride deposited by plasma atomic layer deposition as a Schottky contact to gallium nitride
نویسندگان
چکیده
Molybdenum carbonitride films prepared by plasma enhanced atomic layer deposition were studied for use as Schottky contacts to n-type gallium nitride. Deposited using bis(tertbutylimino)bis(dimethylamino)molybdenum and a remote N2/H2 plasma, the diodes capped with Ti/Au displayed excellent rectifying behavior barrier height of 0.87 ± 0.01 eV an ideality factor 1.02 after annealing at 600 °C in N2. These characteristics surpass those pure metal nitride diodes, possibly due work function engineering incorporation C avoid process-induced defects. According x-ray photoelectron spectroscopy energy-dispersive spectroscopy, film composition is approximately MoC0.3N0.7. Grazing incidence diffraction plan-view transmission electron microscopy selected area are consistent rock salt structure lattice parameter 0.42 nm.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2021
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0062140